TOKYO, Jan 23 (Bernama-BUSINESS WIRE) -- Toshiba Memory Corporation, the world leader in memory solutions, has started sampling[1] the industry’s first[2] Universal Flash Storage (UFS) Ver. 3.0[3] embedded flash memory devices. The new line-up utilizes the company’s cutting-edge, 96-layer BiCS FLASH™ 3D flash memory and is available in three capacities: 128GB, 256GB and 512GB[4]. With high-speed read/write performance and low power consumption, the new devices are suitable for applications such as mobile devices, smartphones, tablets, and augmented/virtual reality systems.
The new devices integrate 96-layer BiCS FLASH™ 3D flash memory and a controller in a JEDEC-standard 11.5 x 13.0mm package. The controller performs error correction, wear leveling, logical-to-physical address translation and bad-block management for simplified system development.
The new devices integrate 96-layer BiCS FLASH™ 3D flash memory and a controller in a JEDEC-standard 11.5 x 13.0mm package. The controller performs error correction, wear leveling, logical-to-physical address translation and bad-block management for simplified system development.
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