TOKYO,
Jan 12 (Bernama-BUSINESS WIRE) -- Toshiba Corporation’s (TOKYO:6502) Storage
& Electronic Devices Solutions Company today announced the launch of second
generation 650V silicon carbide (SiC) schottky barrier diodes (SBDs) that
improve on the surge forward current (IFSM) offered by the company’s current
products by approximately 70%. Shipments of the new line-up of eight SiC schottky
barrier diodes start today.
The new SiC schottky barrier diodes, fabricated with Toshiba’s second-generation SiC process, deliver approximately 70% better surge forward current than first generation products, and at the same time reduce the switching loss index of “RON * Qc” [1] by around 30%, making them suitable for use in efficient power factor correction (PFC) schemes.
The new SiC schottky barrier diodes, fabricated with Toshiba’s second-generation SiC process, deliver approximately 70% better surge forward current than first generation products, and at the same time reduce the switching loss index of “RON * Qc” [1] by around 30%, making them suitable for use in efficient power factor correction (PFC) schemes.
No comments:
Post a Comment