Toshiba unveils discrete IGBT for voltage resonance circuits with lower power consumption

Picture : IGBT GT20N135SRA

KUALA LUMPUR, Dec 23 -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched the ‘GT20N135SRA’, a 1350V discrete power semiconductor device IGBT for use in voltage resonance circuits in tabletop induction heating (IH) cookers, IH rice cookers, microwave ovens and other home appliances.

GT20N135SRA features a collector-emitter saturation voltage of 1.75V and a diode forward voltage of 1.8V, approximately 10 per cent and 21 per cent lower, respectively, than the current product, Toshiba said in a statement.

Both the IGBT (insulated-gate bipolar transistor) and diode have improved conduction loss characteristics at high temperature, and the new IGBT can help reduce equipment power consumption, according to a statement.

The new IGBT suppresses short circuit current that flows through the resonance capacitor when equipment is switched on. Its circuit current peak value is 129A, a 31 per cent reduction from the current product.

More information at https://toshiba.semicon-storage.com/ap-en/company.html.

-- BERNAMA